A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 2001, Pages 206-207

  Houle, T J ^a   Williams, K A ^a   Murray, B ^a   Rorison, J M ^a   White, I H ^a   Springthorpe, A J ^a   White, K ^a   Paddon, P ^a   Crump, P A ^a   Silver, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PUMPING (LASER); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE CONTROL; THERMAL EFFECTS;

THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0034811529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2001.947710     Document Type: Conference Paper

References (10)

1. Experimental analysis of characteristic temperature in quantum-well semiconductor lasers
2. Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3 μm In-P based strained-layer quantum-well lasers
3. Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers
4. The temperature dependence of the threshold current of GaInAsP/InP DH lasers
5. Temperature dependence of emission efficiency and lasing threshold in laser diodes
6. An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: New insight and methods of characterization
7. Band-to-band Auger recombination effect on InGaAsP/InP laser threshold
8. Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojuction laser diodes: Spectroscopy of 980 nm high energy emission
9. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers
10. 0?