Effect of recombination in Separate-Confinement Heterostructure (SCH) layers on temperature characteristics of semiconductor lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 632-638

  Kurakake, Hirohide ^b,c   Uchida, Toru ^b   Yamamoto, Tsuyoshi ^b   Higashi, Toshio ^b   Ogita, Shouichi ^a,b   Kobayashi, Masahiro ^b  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

^c KEIO UNIVERSITY   (Japan)

Author keywords

Characteristic temperature; Multiquantum well laser

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ENERGY GAP; HETEROJUNCTIONS; LIGHT EMISSION; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

OPTICAL CONFINEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0031108470     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605715     Document Type: Article

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