Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1703-1705

  Ishikawa, T ^b   Higashi, T ^a,b   Uchida, T ^b   Yamamoto, T ^b   Fujii, T ^b   Shoji, H ^a,b   Kobayashi, M ^b   Soda, H ^a,b  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

High temperature operation; Optical fiber communication; Quantum well lasers; Ridge waveguide lasers; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; ETCHING; HIGH TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

RIDGE WAVEGUIDE LASERS; THRESHOLD CURRENT DENSITY; WET ETCHING;

QUANTUM WELL LASERS;

EID: 0032297298     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730475     Document Type: Article

References (9)

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