A quantitative study of radiative, auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 801-810

  Fehse, Robin ^b   Tomić, Stanko ^b   Adams, Alfred R ^a,b   Sweeney, Stephen John ^a,b   O'Reilly, Eoin P ^c   Andreev, Aleksey ^b   Riechert, Henning ^d  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Epitaxial growth; Gallium alloys; Laser thermal factors; Optical fiber communication; Quantum well lasers; Semiconductor defects; Semiconductor device measurements; Semiconductor device modeling

Indexed keywords

AUGER RECOMBINATION; LASER THERMAL FACTORS; OPTICAL FIBER COMMUNICATION; RADIATIVE RECOMBINATION; THRESHOLD CARRIER DENSITY;

CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; HAMILTONIANS; OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPONTANEOUS EMISSION;

QUANTUM WELL LASERS;

EID: 0036662191     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801684     Document Type: Article

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