Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

Applied Physics Letters

Volumn 77, Issue 5, 2000, Pages 630-632

  Hader, J ^a   Koch, S W ^a   Moloney, J V ^b   O'Reilly, E P ^c  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF ARIZONA   (United States)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000335273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127067     Document Type: Article

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