Improved temperature dependence of 1.3μm AlGaInAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

Electronics Letters

Volumn 34, Issue 22, 1998, Pages 2130-2132

  Sweeney, S J ^a   Higashi, T ^a   Adams, A R ^a   Uchida, T ^b   Fujii, T ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ENERGY GAP; ETCHING; HYDROSTATIC PRESSURE; PHOTOLUMINESCENCE; PRESSURE MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE MEASUREMENT; WAVEGUIDES;

NONRADIATIVE RECOMBINATION; THRESHOLD CURRENT; WET ETCHING TECHNIQUE;

QUANTUM WELL LASERS;

EID: 0032181777     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981461     Document Type: Article

References (8)

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2. PHILLIPS, A.F., SWEENEY, S.J., ADAMS, A.R., and THIJS, P.J.A.: 'The hydrostatic pressure dependence of the threshold current in 1.3 μm quantum well semiconductor diode lasers', to be published in Phys. Stat. Solidi (B)
3. o in 1.3μm semiconductor lasers', IEEE J. Sel. Topics Quantum Electron., 1995, 1, pp. 250-263
4. CHEN, T.R., CHANG, B., CHIU, L.C., YU, K.L., MARGALIT, S., and YARIV, A.: 'Carrier leakage and temperature dependence of InGaAsP lasers', Appl. Phys. Lett., 1983, 43, pp. 217-218
5. SWEENEY, S.J., PHILLIPS, A.F., ADAMS, A.R., O'REILLY, E.P., SILVER, M., and THUS, P.J.A.: CLEO'98 Tech. Dig., 1998, Vol. 6, p. 304
6. ADAMS, A.R., SILVER, M., and ALLAM, J.: 'Semiconductors and semimetals' (Academic Press, 1998), pp. 301-352
7. PATEL, D., MENONI. C.S., and TEMKIN, H.: 'Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5GPa', Appl. Phys. Lett., 1993, 62, pp. 2459-2461
8. HIGASHI, T., SWEENEY, S.J., PHILLIPS, A.F., ADAMS, A.R., O'REILLY, E.P., UCHIDA, T., and FUJII, T.: Observation of reduced non-radiative current in 1.3 μn AlGaInAs/InP strained MQW lasers', submitted to IEEE Photonics Technol. Lett.