Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 8, 1996, Pages 1478-1485

  Seki, Shunji ^a,b   Oohashi, Hiromi ^b   Sugiura, Hideo ^a,b   Hirono, Takuo ^b   Yokoyama, Kiyoyuki ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CURRENTS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

AUGER RECOMBINATION CURRENT; ELECTROSTATIC BAND PROFILE DEFORMATION; TEMPERATURE SENSITIVITY; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0030216017     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.511561     Document Type: Article

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