Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 413-419

  Higashi, Toshio ^a,b,c   Sweeney, Stephen J ^a   Phillips, Alistair F ^a   Adams, Alfred R ^a   O'Reilly, Eoin P ^a,d,e,f   Uchida, Toru ^b,g   Fujii, Takuya ^b,h,i  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FUJITSU LABORATORIES LTD   (Japan)

^c KANAZAWA UNIVERSITY   (Japan)

^d TRINITY COLLEGE DUBLIN   (Ireland)

^e TRINITY COLLEGE   (United Kingdom)

^f FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^g NAGOYA UNIVERSITY   (Japan)

^h SHINSHU UNIVERSITY   (Japan)

ⁱ OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; THERMAL EFFECTS;

AUGER RECOMBINATION; LASER THERMAL FACTOR; LASING; MULTIQUANTUM WELL LASERS; RECOMBINATION CURRENT; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0033123647     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788399     Document Type: Article

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