Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 35, Issue 4, 1999, Pages 635-646

  Esquivias, I ^a   Weisser, S ^b   Romero, B ^a   Ralston, J D ^b,c   Rosenzweig, J ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC IMPEDANCE MEASUREMENT; EQUIVALENT CIRCUITS; MICROWAVE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER DYNAMICS;

QUANTUM WELL LASERS;

EID: 0032666793     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.753669     Document Type: Article

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