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IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 340-349

Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

(8) Selmic, Sandra R a,b Chou, Tso Min a,b Sih, JiehPing b Kirk, Jay B b Mantie, Art c Butler, Jerome K a,b Bour, David a,d Evans, Gary A a,b

a IEEE (United States)

b Southern Methodist University (United States)

c Laser Diode Inc (United States)

d AGILENT TECHNOLOGIES (United States)

Author keywords

Optical waveguide theory; Quantum theory; Quantum well lasers; Ridge waveguides; Semiconductor lasers

Indexed keywords

ALUMINUM GALLIUM INDIUM ARSENIDE LASERS; ELECTROMAGNETIC WAVEGUIDE THEORY; INDIUM PHOSPHIDE LASERS; MULTIBAND EFFECTIVE MASS THEORY; RIDGE WAVEGUIDES; THRESHOLD CURRENT;

ELECTRIC CURRENT MEASUREMENT; ELECTROMAGNETIC FIELD THEORY; OPTICAL WAVEGUIDES; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING;

QUANTUM WELL LASERS;

EID: 0035263864 PISSN: 1077260X EISSN: None Source Type: Journal
DOI: 10.1109/2944.954148 Document Type: Article

Times cited : (112)

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