Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 35, Issue 5, 1999, Pages 771-782

  Minch, J ^a   Park, S H ^a,b   Keating, T ^a   Chuang, S L ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Catholic University of Daegu   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; GAIN MEASUREMENT; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPONTANEOUS EMISSION;

AUGER COEFFICIENT; OPTICAL GAIN SPECTRUM;

QUANTUM WELL LASERS;

EID: 0032653192     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.760325     Document Type: Article

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