High-Temperature Characteristics of 1.3-μm InAsP-InAlGaAs Ridge Waveguide Lasers

IEEE Photonics Technology Letters

Volumn 11, Issue 2, 1999, Pages 164-166

  Yamada, M ^a   Anan, T ^a   Tokutome, K ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Quantum well lasers; Semiconductor lasers; Temperature

Indexed keywords

OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0033079927     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.740691     Document Type: Article

References (7)

1. H. Oohashi, S. Seki, T. Hirono, H. Sugiura, T. Amano, M. Ueki, J. Nakano, M. Yamamoto, Y. Tohmori, M. Fukuda, and K. Yokoyama, "High-power and high-efficiency 1.3-μm InAsP compressively-strained MQW lasers at high temperatures," Electron. Lett., vol. 31, pp. 556-557, 1995.
2. 0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multi quantum well structure lasers," Electron. Lett., vol. 31, pp. 803-805, 1995.
3. T. Anan, K. Nishi, A. Tomita, K. Tokutome, and S. Sugou, "Conduction-band discontinuity of InAsP/InP heterojunction," Jpn. J. Appl. Phys., vol. 37, pp. 3915-3918, 1998.
4. 1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Quantum Electron., vol. 30, pp. 511-523, 1994.
5. M. Yamada, T. Anan, K. Tokutome, and S. Sugou, "High-temperature characteristics of 1.3-μm InAsP/InAlGaAs MQW lasers," in Proc. Int. Conf. InP and Related Materials, Hyannis, MA, 1997, pp. 559-562, paper WD3.
6. T. Anan, M. Yamada, K. Tokutome, and S. Sugou, "1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operation," Electron. Lett., vol. 33, pp. 1048-1049, 1997.
7. J. Ko, M. J. Mondry, D. B. Young, S. Y. Hu, L. A. Coldren, and A. C. Gossard, "Threshold reduction by rapid thermal annealing in MBE-grown AlInGaAs multiquantum well lasers on GaAs," Electron. Lett., vol. 32, pp. 351-352, 1996.