Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Thin Solid Films

Volumn 423, Issue 2, 2003, Pages 212-217

  Perera, Rohana ^a   Ikeda, Akihiro ^a   Hattori, Reiji ^a   Kuroki, Yukinori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Annealing; Metal oxide semiconductor structure; Plasma processing and deposition; Silicon oxynitride

Indexed keywords

ANNEALING; ELECTRIC FIELDS; ELECTRON TUNNELING; HYSTERESIS; MOS DEVICES; NITROGEN COMPOUNDS; SILICON COMPOUNDS; ULSI CIRCUITS;

POST-METALLIZATION ANNEALING (PMA);

SEMICONDUCTING FILMS;

EID: 0037439485     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01044-1     Document Type: Article

References (16)

1. Hori T., Iwasaki H. IEEE Electron. Device Lett. 10:(2):1989;64.
2. Chen C.H., Fang Y.K., Yang C.W., Ting S.F., Tsair Y.S., Yu M.C., Hou T.H., Wang M.F., Chen S.C., Yu C.H., Liang M.S. IEEE Electron. Device Lett. 22:(8):2001;378.
3. Gusev E.P., Lu H.C., Garfunkel E.L., Gustafsson T., Green M.L. IBM J. Res. Dev. 43:(3):1999;265.
4. Gusev E.P., Lu H.C., Gustafsson T., Garfunkel E., Green M.L., Brasen D. J. Appl. Phys. 82:(2):1997;896.
5. Kraft R., Schneider T.P., Dostalik W.W., Hattangady S. J. Vac. Sci. Technol. B. 15:(4):1997;967.
6. Baumvol I.J.R., Krug C., Stedile F.C., Green M.L., Jacobson D.C., Eaglesham D., Bernstein J.D., Shao J., Denholm A.S., Kellerman P.L. Appl. Phys. Lett. 74:(6):1999;806.
7. Ikeda A., Abd Elnaby M., Hattori R., Kuroki Y. Thin Solid Films. 386:(1):2001;111.
8. Ikeda A., Abd Elnaby M., Fujimura T., Hattori R., Kuroki Y. Thin Solid Films. 385:(1-2):2001;215.
9. Takagi K., Ikeda A., Fujimura T., Kuroki Y. Thin Solid Films. 386:(2):2001;160.
10. Ting W., Hwang H., Lee J., Kwong D.L. Appl. Phys. Lett. 57:1990;2808.
11. Kawai Y., Konishi N., Watanabe J., Ohmi T. Appl. Phys. Lett. 64:1994;2223.
12. Saito Y., Sekine K., Hirayama M., Ohmi T. Jpn J. Appl. Phys. 38:1999;2329.
13. Tao M., Park D., Mohammad S.N., Li D., Botchkerav A.E., Morkoc H. Philos. Mag. B. 73:(4):1996;723.
14. Flueraru C., Gartner M., Buiu O., Radoi R., Cernica I., Imperia P., Schrader S. Surf. Sci. 482:2001;448.
15. Cheng X.R., Cheng Y.C., Liu B.Y. J. Appl. Phys. 63:1988;797.
16. Houng M.P., Wang Y.H., Chang W.J. J. Appl. Phys. 86:1999;1488.