Effect of post-oxidation annealing of the oxynitride on the C-V and G-V characteristics of Al/thin oxynitride/n-Si tunnel diodes

Semiconductor Science and Technology

Volumn 15, Issue 9, 2000, Pages 883-887

  Bhat, V K ^a   Bhat, K N ^a   Subrahmanyam, A ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; NATURAL FREQUENCIES; OXIDATION; SEMICONDUCTING SILICON; THERMOANALYSIS; TUNNEL DIODES; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; CONDUCTANCE-VOLTAGE (G-V) CHARACTERISTICS; INTERFACE STATE DENSITY; OXYNITRIDES; POST-OXIDATION ANNEALING (POA);

SEMICONDUCTING FILMS;

EID: 0034274708     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/9/301     Document Type: Article

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