Rapid thermal anneal of gate oxides for low thermal budget TFT's

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 63-69

  Bhat, Navakanta ^a   Wang, Albert W ^b   Saraswat, Krishna C ^c  

^a Stanford University ^*  (United States)

^b MOTOROLA INC   (United States)

^c Packard Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); NITROGEN OXIDES; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CHARGE PUMPING TECHNIQUES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILM TRANSISTORS;

EID: 0032740569     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737442     Document Type: Article

References (17)

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