Avalanche noise characteristics of single AlxGa1-x As(0.3 < x < 0.6) - GaAs Heterojunction APDs

IEEE Journal of Quantum Electronics

Volumn 41, Issue 1, 2005, Pages 70-75

  Groves, C ^a   Chia, C K ^a   Tozer, R C ^a   David, J P R ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche photodiodes (APDs); Heterojunctions; Impact ionization; Noise

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; IMPACT IONIZATION; MONTE CARLO METHODS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

AVALANCHE MULTIPLICATION; AVALANCHE PHOTODIODES; EXCESS NOISE;

AVALANCHE DIODES;

EID: 12844262928     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.838530     Document Type: Article

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