Ionization coefficients in AlxGa1-xAs (x = 0-0.60)

Semiconductor Science and Technology

Volumn 15, Issue 7, 2000, Pages 692-699

  Plimmer, S A ^a   David, J P R ^a   Rees, G J ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTATIONAL METHODS; ELECTRIC FIELD EFFECTS; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

IONIZATION COEFFICIENTS; PHOTOMULTIPLICATION MEASUREMENTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034225857     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/7/307     Document Type: Article

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