Boron diffusion in SiO2 involving high-concentration effects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2685-2687

  Aoyama, T ^a   Arimoto, H ^a   Horiuchi, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Boron; Concentration; Diffusion; MOS; Penetration; SiO2

Indexed keywords

ANNEALING; BORON; DIFFUSION; GATES (TRANSISTOR); POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SILICA;

POLYSILICON GATES;

MOSFET DEVICES;

EID: 0035300695     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2685     Document Type: Article

References (7)