Oxide thickness effect on boron diffusion in thin oxide p+ Si gate technology

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 242-243

  Fair, Richard B ^a,b  

^a IEEE

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SILICA;

BORON DIFFUSIVITY; MOLECULAR FRACTION; PEROXY LINKAGE DEFECT; SILICON GATE TECHNOLOGY;

GATES (TRANSISTOR);

EID: 0030151035     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491842     Document Type: Article

References (9)

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