Thermal oxidation of outdiffusing SiO with permeating O 2 in a SiO 2 film studied by angle-resolved X-ray photoelectron spectroscopy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 141-146

  Takakuwa, Yuji ^a   Nihei, Mizuhisa ^a,b   Miyamoto, Nobuo ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c TOHOKU GAKUIN UNIVERSITY   (Japan)

Author keywords

Angle resolved XPS; Si oxidation; SiO diffusion; SiO 2 decomposition; Suboxide

Indexed keywords

ANNEALING; DECOMPOSITION; DIFFUSION; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MECHANICAL PERMEABILITY; MOLECULES; OXYGEN; SEMICONDUCTING SILICON; SURFACE STRUCTURE; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY (ARXPS);

SILICA;

EID: 0031548154     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80068-2     Document Type: Article

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