Volume and interfacial dielectric properties of A1/Ho2 O3/A1 thin-film capacitors

Journal of Electrostatics

Volumn 51-52, Issue 1-4, 2001, Pages 131-136

  Wiktorczyk, T ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Dielectric permittivity; Dielectric properties; Holmium oxide; MIM structures; Near electrode barriers; Rare earth oxides; Thin films

Indexed keywords

CAPACITORS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PERMITTIVITY;

INSULATOR THICKNESS; THIN FILM CAPACITORS;

THIN FILM DEVICES;

ELECTROSTATICS;

EID: 0035334175     PISSN: 03043886     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3886(01)00032-8     Document Type: Article

References (6)

1. Rare earth compounds (oxides, sulfides, silicides, boron,...) as thin films and thin crystals
2. Rare-earth oxide films: Their preparation and characterization
3. Low temperature dielectric studies of some rare-earth oxides
4. Dielektricheskie svoistva, infrakrasnyje spektry i zaryady na atomakh v kubicheskikh okislakh redkozemelnyh metallov
5. Thermally stimulated currents in holmium oxide thin-film capacitors
6. 3/Al thin-film capacitors and their AC characteristics