Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 408-411

  Sun, X W ^a   Kwok, H S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; REFRACTIVE INDEX; SAPPHIRE; SPECTROSCOPIC ANALYSIS; SUBSTRATES; ZINC OXIDE;

VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY (VASE);

LIGHT EMITTING DIODES;

EID: 0032606533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370744     Document Type: Article

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