Multilayer formation during annealing of thin Tb layers on SiO2 substrates

Surface and Interface Analysis

Volumn 26, Issue 6, 1998, Pages 420-424

  Berning, G L P ^a   Swart, H C ^a  

^a UNIVERSITY OF THE FREE STATE   (South Africa)

Author keywords

AES; Auger; Depth profile; Rare earth metals; SiO2; Tb

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DIFFUSION; DISSOCIATION; MULTILAYERS; OXIDATION; OXYGEN; SILICA; SILICON; SUBSTRATES; TERBIUM;

DEPTH PROFILE; TERBIUM OXIDE; TERBIUM SILICIDE;

METALLIC FILMS;

EID: 0032074272     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(19980515)26:6<420::aid-sia380>3.0.co;2-3     Document Type: Article

References (9)

1. P. Grönig, T. Greber, J. Osterwalder and L. Schlapbach, Vacuum 41, 1439 (1990).
2. R. Pretorius, J. M. Harris and M-A. Nicolet, Solid State Electron. 21, 667 (1978).
3. S. Q. Wang and J. W. Mayer, J. Appl. Phys. 64, 4711 (1988).
4. S. Q. Wang and J. W. Mayer, J. Appl. Phys. 65, 4774 (1989).
5. G. L. P. Berning, H. C. Swart and B. de Witt, Appl. Surf. Sci. 64, 1 (1993).
6. G. L. P. Berning, H. C. Swart and W. D. Roos, Appl. Surf. Sci. 73, 305 (1993).
7. G. L. P. Berning and H. C. Swart, Appl. Surf. Sci. 78, 339 (1994).
8. K. N. Tu and J. W. Mayer, in Thin Films-Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu and J. W. Mayer., p. 359-405, Wiley, New York (1978).
9. A. I. Barg, B. S. Bokstein and L. M. Klinger, J. Appl. Phys. 72, 1356 (1992).