Epitaxial praseodymium oxide: A new high-K dielectric

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2161-2165

  Osten, H J ^a   Bugiel, E ^a   Fissel, A ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SILICON;

ELECTRON MASSES;

PRASEODYMIUM COMPOUNDS;

EID: 0142075252     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00190-4     Document Type: Article

References (9)

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2. Osten H.J., Liu J.P., Bugiel E., Müssig H.J., Zaumseil P. Growth of crystalline praseodymium oxide on silicon. J. Cryst. Growth. 235:2002;229-234.
3. 2 film growth on Si by laser ablation deposition in ultrahigh-vacuum. Jpn. J. Appl. Phys. 29:1990;L1199-L2002.
4. 2 annealings Appl. Phys. Lett. 79:2001;671-673.
5. Fissel A., Dabrowski J., Osten H.J. Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(0. 0 1) J. Appl. Phys. 91:2002;8986-8991.
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7. 3/Si(0. 0 1) heterojunctions Appl. Phys. Lett. 80:2002;297-299.
8. 2 in fluorite phase. Microelectron. Reliab. 41:2001;1093-1096.
9. 3 high- k gate dielectrics. Proc ESSDERC2002 2002;407-10.