Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1241-1246

  Winstead, Brian ^a   Ravaioli, Umberto ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MONTE CARLO METHODS; NANOTECHNOLOGY; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

AIRY FUNCTION APPROACH; COUPLED QUANTUM INJECTION; METAL SILICIDE;

MOSFET DEVICES;

EID: 0033750787     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842968     Document Type: Article

References (6)

1. C. Wang, J. P. Snyder, and J. R. Tucker.Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett., vol. 74, pp. 1174-1176, 1999.
2. J. P. Snyder, C. R. Helms, and Y. Nishi.Experimental investigation of a PtSi source and drain field emission transistors. Appl. Phys. Lett., vol. 67, pp. 1420-1422, 1995.
3. M. Nishisaka and T. Asano.Reduction of the floating-body effect in SOI MOSFET's by using Schottky source/drain contacts. Ext. Abs. 1997 Int. Conf. Solid-State Devices and Materials, 1997, pp. 160-161.
4. K. F. Brennan and C. J. Summers.Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approach. J. Appl. Phys., vol. 61, pp. 614-623, 1987.
5. A. Duncan, U. Ravaioli, and J. Jakumeit.Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors. IEEE Trans. Electron Devices, vol. 45, pp. 867-876, May 1998.
6. M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, 2nd ed. Berlin, Germany: Springer-Verlag, 1989.