Formation of platinum-based suicide contacts: Kinetics, stoichiometry, and current drive capabilities

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7801-7810

  Larrieu, G ^a   Dubois, E ^a   Wallart, X ^a   Baie, X ^a   Katcki, J ^b  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; HEATING; INTERFACES (MATERIALS); PLATINUM; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT RESISTIVITY; SILICIDATION;

ELECTRIC CONTACTS;

EID: 0346280181     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605817     Document Type: Article

References (33)

1. J. Chen, J. P. Colinge, D. Flandre, R. Gillon, J. P. Raskin, and D. Vanhoenaoker, J. Electrochem. Soc. 144, 2437 (1997).
2. SIA Semiconductor Industry Association, "The International Technology Roadmap for Semiconductors - ITRS," 2001.
3. S. Guha, E. Gusev, M. Copel, L. Ragnarson, and D. Buchanan, MRS Bull. 27, 226 (2002).
4. C. M. Osburn and K. R. Bellur, Thin Solid Films 332, 428 (1998).
5. J. R. Tucker, C. Wang, and P. S. Carney, Appl. Phys. Lett. 65, 618 (1994)
6. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. J. King, and C. Hu, Tech. Dig, - Int. Electron Devices Meet., 57 (2000).
7. E. Dubois and G. Larrieu, Solid-State Electron. 46, 997 (2002).
8. J. Derrien, in Properties of Metal Suicides, edited by K. Maex and M. Van Rossum (IEE INSPEC, 1995), p. 164.
9. X. Zhenjia, in Properties of Metal Silicides, edited by K. Maex and M. Van Rossum (IEE INSPEC, 1995), p. 169.
10. L. Ley, Y. Wang, V. Van Nguyen, S. Fisson, D. Souche, G. Vuye, and J. Rivory, Thin Solid Films 270, 561 (1995).
11. S. M. Zhou, M. Hundhausen, T. Shark, L. Y. Chen, and L. Ley, J. Vac. Sci. Technol. A 17, 144 (1999).
12. T. Stark, H. Grunleitner, M. Hundhausen, and L. Ley, Thin Solid Films 358, 73 (2000).
13. N. Franco, J. E. Klepeis, C. Bostedt, T. Van Buuren, C. Heske, O. Pankratov, and L. J. Terminello, J. Electron Spectrosc. Relat, Phenom. 114-116, 1191 (2001).
14. Multipak software manual, Physical electronics, Vol. 50.
15. S. Hofmann, in Practical Surface Analysis, 2nd ed., edited by D. Briggs and M. P. Seah (Wiley, New York, 1990).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
17. J. R. Jimenez, X. Xiao, J. C. Sturm, and P. W. Pellegreni, Appl. Phys. Lett. 67, 506 (1995).
18. C. R. Crowell and V. L. Rideout, Solid-State Electron. 12, 89 (1969).
19. F. A. Padovani and R. Stratton, Solid-State Electron. 9, 695 (1966).
20. F. A. Padovani and G. G. Sumner, J. Appl. Phys. 37, 921 (1966).
21. F. A. Padovani, Solid-State Electron. 11, 193 (1968).
22. C. A. Crider, J. M. Poate, J. E. Rowe, and T. T. Sheng, J. Appl. Phys. 52, 2860 (1981).
23. S. J. Morgan, R. H. Williams, and J. M. Mooney, Appl. Surf. Sci. 56-58, 493 (1992).
24. R. A. Donaton, S. Jin, H. Bender, T. Conard, I. Dewolf, K. Maex, A. Vantomme, and G. Langouche, Electrochem. Solid-State Lett. 2, 195 (1999).
25. J. C. Tsang, Y. Yokota, R. Matz, and G. Rubloff, Appl. Phys. Lett. 44, 430 (1984).
26. P. J. Grunthaner, F. J. Grunthaner, and A. Madhukar, J. Vac. Sci. Technol. 20, 680 (1982).
27. K. Hirose, I. Ohdomari, and M. Uda, Phys. Rev. B 37, 6929 (1988).
28. W. E. Morgan and J. R. Van Wazer, J. Phys. Chem. 77, 96 (1973).
29. J. W. Keister, J. E. Rowe, J. J. Kolodziej, and T. E. Madey, J. Vac. Sci. Technol. B 18, 2174 (2000).
30. M. L. Miller and R. W. Linton, Anal, Chem. 57, 2314 (1985).
31. J. B. Bindell, J. W. Colby, D. R. Wonsidler, J. M. Poate, D. K. Conley, and T. C. Tisone, Thin Solid Films 37, 441 (1976).
32. R. Schmiedl, V. Demuth, P. Lahnor, H. Godehardt, Y. Bodschwinna, C. Harder, H. P. Strunk, M. Schulz, and K. Heinz, Appl. Phys. A: Mater. Sci. Process. 62, 223 (1996).
33. S.P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983).