Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 74, Issue 8, 1999, Pages 1174-1176

  Wang, C ^a   Snyder, John P ^b   Tucker, J R ^c  

^a EG&G   (United States)

^b Spinnaker Semiconductor   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON EMISSION; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; OXIDES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

SCHOTTKY BARRIER HEIGHT; THERMAL EMISSION;

MOSFET DEVICES;

EID: 0033593712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123477     Document Type: Article

References (7)

1. D. Frank, S. Laux, and M. Fischetti, IEEE Trans. Electron Devices 40, 2103 (1993).
2. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H. S. Momose, and H. Iwai, J. Vac. Sci. Technol. B 13, 1740 (1995).
3. R. Hattori, A. Nakae, and J. Shirafuji, Jpn. J. Appl. Phys., Part 2 31, L1467 (1992).
4. S. A. Hareland, A. F. Tasch, and C. M. Maziar, Electron. Lett. 29, 1894 (1993).
5. J. R. Tucker, C. Wang, and P. S. Carney, Appl. Phys. Lett. 65, 618 (1994).
6. J. P. Snyder, C. R. Helms, and Y. Nishi, Appl. Phys. Lett. 67, 1420 (1995).
7. M. Nishisaka and T. Asano, Jpn. J. Appl. Phys., Part 1 37, 1295 (1998).