20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 445-452

  Kedzierski, Jakub ^a   Xuan, Peiqi ^a   Subramanian, Vivek ^a   Bokor, Jeffrey ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Anderson, Erik ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

SCHOTTKY SOURCE; SILICIDE SOURCE; ULTRATHIN BODY;

MOSFET DEVICES;

EID: 0034317576     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0947     Document Type: Article

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