Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment

Journal of the Electrochemical Society

Volumn 147, Issue 3, 2000, Pages 1186-1192

  Liu, Po Tsun ^a   Chang, Ting Chang ^b   Yang, Ya Liang ^b   Cheng, Yi Fang ^a   Lee, Jae Kyun ^c   Shih, Fu Yung ^c   Tsai, Eric ^c   Chen, Grace ^c   Sze, Simon M ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Dow Corning Taiwan Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COPPER; DEUTERIUM; DIELECTRIC PROPERTIES OF SOLIDS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC VARIABLES MEASUREMENT; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SILICON COMPOUNDS; THERMAL STRESS; ULSI CIRCUITS;

COPPER INTERCONNECTS; DEUTERIUM PLASMA TREATMENT; HYDROGEN SILSESQUIOXANE; POOLE-FRENKEL MECHANISM; RESISTANCE CAPACITANCE REDUCTION;

METALLIC FILMS;

EID: 0033906630     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393334     Document Type: Article

References (27)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (1997).
2. P. A. Kohl, Q. Zhao, K. Patel, D. Schmidt, S. A. Bidstrup-Allen, R. Shick, and S. Jayaraman, in Dielectric Material Integration for Microelectronics, W. D. Brown, S. S. Ang, M. Loboda, S. Sammakia, R. Singh, and H. S. Rathore, Editors, PV 98-3, p. 169. The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
3. R. Y. Leung, T. Nakano, S. Case, B. Sung, J. J. Yang, and D. K. Choi, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 19, Santa Clara, CA, Feb 10-11, 1997.
4. G. Sugahara, N. Aoi, M. Kubo, K. Arai, and K. Sawada, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 19, Santa Clara, CA, Feb 10-11, 1997.
5. M. G. Albrecht and C. Blanchelte, J. Electrochem. Soc., 145, 4019 (1998).
6. M. J. Loboda, C. M. Grove, and R. F. Schneider, J. Electrochem. Soc., 145, 2861 (1998).
7. H. Meynen, R. Uttecht, T. Gao, M. Van Hove, S. Vanhaelemeersch, and K. Maex, in Dielectric Material Integration for Microelectronics, W. D. Brown, S. S. Ang, M. Loboda, S. Sammakia, R. Singh, and H. S, Rathore, Editors, PV 98-3, p. 29, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
8. T. C. Chang, P. T. Liu, F. Y. Shih, and S. M. Sze, Electrochem. Solid-State Lett., 2, 390 (1999).
9. B. T. Ahlburn, G. A. Brown, T. R. Seha, and T. F. Zoes, No. 95-ISMIC-101D, in Proceedings of the International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 36, Santa Clara, CA (1995).
10. N. H. Hendricks, Mater. Res. Soc. Symp. Proc., 443, 3 (1996).
11. D. Thomas, G. Smith, and L. Nguyen, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 361, Santa Clara, CA, Feb 10-11, 1997.
12. J. Wataerloos, H. Meynen, B. Coenegrachts, T. Gao, J. Grillaert, and L. Van den hove, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 310, Santa Clara, CA, Feb 10-11, 1997.
13. S. Bothra, L. Q. Qian, M. Weiling, and D. Pramanik, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 273, Santa Clara, CA, Feb 10-11, 1997.
14. V. M. Gayay, A. Acovic, B. Aryarwala, G. Endicott, M. Shapiro, and S. Yankee, No. 96-ISMIC-106, in Proceedings of the 13th International VLSI Multilevel Interconnection Conference, VMIC, p. 116, June 18-20, 1996.
15. Y. Huang, T. R. Yew, W. Lur, and S. W. Sun, No. 98-ISMIC-108, in Proceedings of the International VLSI Multilevel Interconnection Conference, VMIC, p. 33 (1998).
16. Dow Corning Corporation, Fox User Group Meeting, Midland, MI, USA (1996).
17. J. N. Bremmer, Y. Liu, K. G. Gruszynski, and F. C. Dall, No. 97-ISMIC-222D, in Proceedings of the Third International Dielectrics for ULSI Multilevel Interconnection Conference, DUMIC, p. 333, Santa Clara, CA. Feb 10-11, 1997.
18. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc., 133, 1242 (1986).
19. A. L. S. Loke, C. Ryu, C. P. Yue, J. S. H. Cho, and S. S. Wong, IEEE Electron. Device Lett., EDL-19, 177 (1998).
20. J. G. Simmons, in Handbook of Thin Film Technology, L. I. Maissel and R. Glang, Editors, Chap. 14, p. 25, McGraw-Hill, New York (1970).
21. P. Hesto, in Instabilities in Silicon Devices, G. Barvotlin, A. Vapaille, Editors, Vol. 1, Chap. 5, p 263, North-Holland, Amsterdam (1986).
22. J. G. Simmons, in Handbook of Thin Film Technology, L. I. Maissel and R. Glang, Editors, Chap. 14, p. 28, McGraw-Hill, New York (1970).
23. S. M. Sze, Physics of Semiconductor Devices, Chap. 7, p. 402, Wiley, New York (1981).
24. D. K. Schroder, Semiconductor Material and Device Characterization, Chap. 6, p. 371, Wiley-Interscience, New York (1998).
25. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett., 68, 2526 (1996).
26. R. A. B. Devine, J. L. Autran, W. L. Warren, K. L. Vanheusdan, and J. C. Rostaing, Appl. Phys. Lett., 70, 2999 (1997).
27. W. F. Clark, T. G. Ference, T. B. Hook, K. M. Watson, S. W. Mittl, and J. S. Burnham, IEEE Trans. Electron Devices, ED-20, 48 (1999).