35 nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

  Saitoh, Wataru ^a   Yamagami, Shigeharu ^a   Itoh, Atsushi ^a   Asada, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

SEPARATION BY IMPLANTED OXYGEN (SIMOX); SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 0032672720     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l629     Document Type: Article

References (10)

1. J. R. Tucker, C. Wang and P. S. Carney: Appl. Phys. Lett. 65 (1994) 618.
2. R. Hattori and J. Shirafuji: Jpn. J. Appl. Phys. 33 (1994) 612.
3. C.-K. Huang, W. E. Zhang and C. H. Yang: IEEE Trans. Electron Devices 45 (1998) 842.
4. J. P. Snyder, C. R. Helms and Y. Nishi: Appl. Phys. Lett. 67 (1995) 1420.
5. C. Wang, J. P. Snyder and J. R. Tucker: 56th Device Research Conf. Dig., Virginia, June 1998, p. 72.
6. M. Nishisaka, Y. Ochiai and T. Asano: 56th Device Research Conf. Dig., Virginia, June 1998, p. 74.
7. J. C. Hu, H. Yang, R. Kraft, A. L. P. Rotondaro, S. Hattangady, W. W. Lee, R. A. Chapman, C.-P. Chao, A. Chatterjee, M. Hanratty, M. Rodder and I.-C. Chen: IEDM Tech. Dig. (1997) 825.
8. H. Shimada, Y. Hirano, T. Ushiki, K. Ino and T. Ohmi: IEEE Trans. Electron Devices 44 (1997) 1903.
9. K. Goto, J. Matsuo, Y. Tada, T. Tanaka, Y. Momiyama, T. Sugii and I. Yamada: IEDM Tech. Dig. (1997) 471.
10. C. Fiegna, H. Iwai, T. Wada, M. Saitoh, E. Sangiorgi and B. Ricco: IEEE Trans. Electron Devices 41 (1994) 941.