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Volumn 79, Issue 26, 2001, Pages 4322-4324

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

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Indexed keywords


EID: 0035945153     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1428769     Document Type: Article
Times cited : (24)

References (16)
  • 14
    • 22244451272 scopus 로고    scopus 로고
    • W. J. Moore, J. A. Freitas, Jr., G. C. B. Braga, R. J. Molnar, S. K. Lee, K. Y. Lee, and I. J. Song, Appl. Phys. Lett. 79, 1121 (2001).
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1121
    • Moore, W.J.1    Freitas, I.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.