Caracterization of AIN buffer layers on (0001)-sapphire substrates

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 32-37

  Le Vaillant, Y M ^a   Bisaro, R ^b   Olivier, J ^b   Durand, O ^b   Duboz, J Y ^b   Ruffenach Clur, S ^a   Briot, O ^a   Gil, B ^a   Aulombard, R L ^a  

^a UNIV MONTPELLIER   (France)

^b THALES   (France)

Author keywords

AlN; Buffer layers; Sapphire substrate

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

X RAY REFLECTOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031339842     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00205-5     Document Type: Article

References (11)

1. S. Nakamura, M.S. Shur, M.A. Khan, GaN and related materials for device application, Mater. Res. Soc. Bull., 22 (2) 1997.
2. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, T. Sasaki, T. Matsuoka, Appl. Phys. Lett., 48 (1986) 353; T. Sasaki, T. Matsuoka, J. Appl. Phys., 77 (1995) 192.
3. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, T. Sasaki, T. Matsuoka, Appl. Phys. Lett., 48 (1986) 353; T. Sasaki, T. Matsuoka, J. Appl. Phys., 77 (1995) 192.
4. S. Nakamura, Jpn. J. Appl. Phys., 30 (10A) (1991) L1705-L1707; S.D. Hersee, J. Ramer, K. Zheng, C. Kranenberg, K. Malloy, M. Banas, M. Goorsky, J. Electron. Mater., 24 (11) (1995) 1519.
5. S. Nakamura, Jpn. J. Appl. Phys., 30 (10A) (1991) L1705-L1707; S.D. Hersee, J. Ramer, K. Zheng, C. Kranenberg, K. Malloy, M. Banas, M. Goorsky, J. Electron. Mater., 24 (11) (1995) 1519.
6. C.F. Lin, G.C. Chi, M.S. Feng, J.D. Guo, J.S. Tsang, J. Minghuang Hong, Appl. Phys. Lett. 68 (26) (1996) 3758.
7. B.E. Warren, Progress in Metal Physics, Vol. 8, Pergamon, London, 1959, p. 147.
8. H. Kiessig, Ann. Phys., 5 (10) (1931) 715, 769.
9. S.K. Snha, E.B. Sirota, S. Garoff, H.B. Stanley, Phys. Rev. B 38 (1988) 2297.
10. J. Zarzycki, Les Verres et l'État Vitreux, chap. VI, Masson, Paris, 1982.
11. I.M. Lifshitz, V.V. Slyozov, J. Phys. Chem. Solids 19 (1/2) (1961) 35.