Suppression of drain conductance in InP-based HEMTs by eliminating hole accumulation

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1189-1193

  Arai, Tomoyuki ^a   Sawada, Ken ^a   Okamoto, Naoya ^a   Makiyama, Kozo ^a   Takahashi, Tsuyoshi ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Drain conductance; Frequency dispersion; HEMT; Kink phenomena

Indexed keywords

ELECTRIC CONDUCTANCE; IMPACT IONIZATION; OHMIC CONTACTS; SEMICONDUCTING INDIUM PHOSPHIDE;

FREQUENCY DISPERSION; KINK PHENOMENA;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0043175242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813463     Document Type: Article

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