Kink modification using body contact bias in InP based InAIAs/InGaAs HEMTs

Electronics Letters

Volumn 32, Issue 12, 1996, Pages 1143-1144

  Suemitsu, T ^a   Enoki, T ^a   Ishii, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gallium indium arsenide; High electron mobility transistors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRODES; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

DRAIN CURRENT; DRAIN TO SOURCE VOLTAGE; GATE BIAS; PARASITIC CURRENT; WET CHEMICAL ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030572227     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960726     Document Type: Article

References (8)

1. NGUYEN, L.D., LARSON, L.E., and MISHRA, U.K.: 'Ultra-high-speed modulation-doped field-effect transistors: A tutorial review', Proc. IEEE, 1992, 80, (4), pp. 494-518
2. ENOKI, T., TOMIZAWA, M., UMEDA, Y., and ISHII, Y.: '0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects', Jpn. J. Appl. Phys., 1994, 33, pp. 798-803
3. IMAI, Y., NAKAMURAm M., KIMURA, S., UMEDA, Y., and ENOKI, T.: '40-Gb/s-class InP HEMT ICs for very-high-speed optical communications'. Proc. IPRM, 1995, pp. 89-92
4. TIHANYI, J., and SCHLÖTTERER, H.: 'Properties of ESFI MOS transistors due to the floating substrate and the finite volume', IEEE Trans. Electron Devices, 1975, ED-22, pp. 1017-1023
5. ENOKI, T., KOBAYASHI, T., and ISHII, Y.: 'Device technologies for InP-based HEMTs and their application to ICs'. IEEE GaAs IC Symp., 1994, pp. 337-340
6. SOMERVILLE, M.H., DEL ALAMOm J.A., and MOKE, w.: A new physical model for the kink effect on InAlAs/InGaAs HEMTs'. IEDM Tech. Dig., 1995, pp. 201-204
7. SUEMITSU, T., ENOKI, T., and ISHII, Y.: 'Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression', Electron. Lett., 1995, 31, (9), pp. 758-759
8. SHIGEKAWA, N., ENOKI, T., FURUTA, T., and ITOH, H.: 'Electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates', IEEE Electron. Device Lett., 1995, 16, (11), pp. 515-517