High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 9, 2000, Pages 1260-1265

  Müllrich, Jens ^a   Thurner, Herbert ^b,c   Müllner, Ernst ^b   Jensen, Joseph F ^d   Stanchina, William E ^d   Kardos, M ^d   Rein, Hans Martin ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b SIEMENS AG   (Germany)

^c Rosenheim University of Applied Science   (Germany)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTICAL LINKS; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL RECEIVERS; TIME DIVISION MULTIPLEXING;

TRANSIMPEDANCE AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 0342484488     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.868033     Document Type: Article

References (10)

1. H.-M. Rein, "Si and SiGe bipolar IC's for 10 to 40 Gb/s optical-fiber TDM links," in High-Speed Circuits for Lightwave Communications: Selected Topics in Electronics and Systems, K. C. Wang, Ed. Singapore: World Scientific, 1999, vol. 1306, pp. 35-71.
2. J. Müllrich, T. F. Meister, M. Rest, W. Bogner, A. Schöpflin, and H.-M. Rein, "40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical-fiber TDM links," Electron. Lett., vol. 34, pp. 452-453, Mar. 1998.
3. H.-M. Rein and M. Möller, "Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s," IEEE J. Solid-State Circuits. vol. 31, pp. 1076-1090, Aug. 1996.
4. M. Pfost and H.-M. Rein, "Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz," IEEE J. Solid-State Circuits, vol. 34, pp. 582-591, Apr. 1998.
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7. A. Koldehoff, M. Schröter, and H.-M. Rein, "A compact bipolar transistor model tor very-high-frequency applications with special regard to narrow emitter stripes and high current densities," Solid-State Electron., vol. 36, pp. 1035-1048, July 1993.
8. M. Neuhäuser, H.-M. Rein, and H. Wernz, "Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links - Design and realization," IEEE J. Solid-State Circuits, vol. 31, pp. 24-29, Jan. 1996.
9. M. Möller, H.-M. Rein, A. Felder, and T. F. Meister, "60 Gbit/s time-division multiplexer in SiGe-bipoiar technology with special regard to mounting and measuring technique," Electron. Lett., vol. 33, pp. 679-680, Apr. 1997.
10. M. Bussmann, U. Langmann, B. Hillary, and W. W. Brown, "A 12.5 Gb/s Si-bipolar IC for PRBS generation and bit error detection up to 25 Gb/s," in ISSCC Dig. Tech. Papers, San Francisco, CA, 1993, pp. 152-153.