40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1697-1700

  Masuda, Toru ^a   Ohhata, Ken ichi ^a   Shiramizu, Nobuhiro ^a   Ohue, Eiji ^a   Oda, Katsuya ^a   Hayami, Reiko ^a   Shimamoto, Hiromi ^a   Kondo, Masao ^a   Harada, Takashi ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT TRANSMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

DEMULTIPLEXER; MULTIPLEXER; SELF ALIGNED SELECTIVE EPITAXIAL GROWTH; SILICON GERMANIUM;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0035683001     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs
2. 45GHz transimpedance 32 dB limiting amplifier and 40Gb/s 1:4 high-sensitivity demultiplexer with decision circuit using SiGe HBTs for 40Gb/s optical receiver
3. An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
4. 40Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMTs
5. 60Git/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
6. 60G/s regenerating demultiplexer in SiGe bipolar technology
7. A 1:4 demultiplexer for 40Gb/s fiber-optic applications
8. Fully monolithically integrated 40-Gbit/s transmitter and receiver
9. 40-Gb/s analog IC chipset for optical receivers