메뉴 건너뛰기




Volumn 33, Issue 8, 1997, Pages 679-680

60Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique

Author keywords

Silicon germanium; Time division multiplexing

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; IMPEDANCE MATCHING (ELECTRIC); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TIME DIVISION MULTIPLEXING;

EID: 0031121765     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970442     Document Type: Article
Times cited : (36)

References (8)
  • 1
    • 0029354345 scopus 로고
    • 50Gbit/s time-division multiplexer in Si-bipolar technology
    • MÖLLER, M., REIN, H.-M., FELDER, A., POPP, I., and BÖCK, I.: '50Gbit/s time-division multiplexer in Si-bipolar technology', Electron. Lett., 1995, 17, pp. 1431-1433
    • (1995) Electron. Lett. , vol.17 , pp. 1431-1433
    • Möller, M.1    Rein, H.-M.2    Felder, A.3    Popp, I.4    Böck, I.5
  • 2
    • 0030105714 scopus 로고    scopus 로고
    • 46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs
    • OTSUJI, T., YONEYAMA, M., IMAI, Y., YAMAGUCHI, S., ENOKI, T., UMEDA, Y., and SANO, E.: '46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs', Electron. Lett., 1996, 32, pp. 685-686
    • (1996) Electron. Lett. , vol.32 , pp. 685-686
    • Otsuji, T.1    Yoneyama, M.2    Imai, Y.3    Yamaguchi, S.4    Enoki, T.5    Umeda, Y.6    Sano, E.7
  • 4
    • 0029694233 scopus 로고    scopus 로고
    • Towards a 40Gbit/s electrical time division multiplexed optical transmission system
    • Beijing, China, May
    • GOTTWALD, E.: 'Towards a 40Gbit/s electrical time division multiplexed optical transmission system'. Proc. ICCT, Beijing, China, May 1996, pp. 60-63
    • (1996) Proc. ICCT , pp. 60-63
    • Gottwald, E.1
  • 5
    • 3142514922 scopus 로고    scopus 로고
    • Si-Bipolar - A potential candidate for high-speed electronics in 20 and 40Gb/s TDM systems
    • Incline Village, Nevada, USA, March invited paper
    • REIN, H.-M., GOTTWALD, E., and MEISTER, T.F.: 'Si-Bipolar - A potential candidate for high-speed electronics in 20 and 40Gb/s TDM systems'. Spring Topical Meetings, Ultrafast Electronics and Optoelectronics, Incline Village, Nevada, USA, March 1997, invited paper
    • (1997) Spring Topical Meetings, Ultrafast Electronics and Optoelectronics
    • Rein, H.-M.1    Gottwald, E.2    Meister, T.F.3
  • 6
    • 0030213937 scopus 로고    scopus 로고
    • Design considerations for very-high-speed Si-bipolar IC's operating up to 50Gb/s
    • REIN, H.-M., and MÖLLER, M.: 'Design considerations for very-high-speed Si-bipolar IC's operating up to 50Gb/s', IEEE J. Solid-State Circuits, 1996, 8, pp. 1076-1090
    • (1996) IEEE J. Solid-State Circuits , vol.8 , pp. 1076-1090
    • Rein, H.-M.1    Möller, M.2
  • 7
    • 84889230468 scopus 로고
    • A 125Gb/s Si-bipolar IC for PRBS generation and bit error detection up to 25Gb/s
    • San Francisco, February
    • BUSSMANN, M., LANGMANN, U., HILLERY, B., and BROWN, W.W.: 'A 125Gb/s Si-bipolar IC for PRBS generation and bit error detection up to 25Gb/s'. ISSCC '93, Dig. Tech. Papers, San Francisco, February 1993, pp. 152-153
    • (1993) ISSCC '93, Dig. Tech. Papers , pp. 152-153
    • Bussmann, M.1    Langmann, U.2    Hillery, B.3    Brown, W.W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.