Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2725-2727

  Kosugi, T ^a   Umeda, Y ^a   Suemitsu, T ^a   Enoki, T ^a   Yamane, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Drain conductance; Frequency dispersion; HEMT; Impact ionization; InAlAs InGaAs; Optical communication systems; Substrate current; Transconductance

Indexed keywords

DISPERSION (WAVES); ELECTRIC CONDUCTANCE; ELECTRIC NETWORK ANALYZERS; IMPACT IONIZATION; NATURAL FREQUENCIES; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

DRAIN CONDUCTANCE; FREQUENCY DIPSERSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035300702     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2725     Document Type: Article

References (10)