60Gbit/s regenerating demultiplexer in SiGe bipolar technology

Electronics Letters

Volumn 33, Issue 23, 1997, Pages 1984-1986

  Felder, A ^a   Moller M ^b   Wurzer, M ^a   Rest, M ^a   Meister, T F ^a   Rein, H M ^b  

^a SIEMENS AG   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Demultiplexing equipment; Silicon germanium

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; MULTIPLEXING EQUIPMENT;

DEMULTIPLEXERS; SILICON GERMANIUM BIPOLAR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031556645     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971354     Document Type: Article

References (7)

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2. GOTTWALD, E., FELDER, A., REIN, H.-M., MÖLLER, M., WURZER, M., STEGMÜLLER, B., PLIHAL, M., BAUER, J., AURACHER, F., ZIRWAS, W., GAUBATZ, U., EBBERG, A., DRÖGEMÜLLER, K., WEISKE, C., FISCHER, G., KRUMMRICH, P., BOGNER, W., and FISCHER, U.: 'Towards a 40Gbit/s electrical time division multiplexed optical transmission system'. Proc. ICCT 1996, Beijing, China, 1996, pp. 60-63
3. REIN, H.-M., GOTTWALD, E., and MEISTER, T.F.: 'Si-Bipolar - A potential candidate for high-speed electronics in 20 and 40Gb/s TDM systems?'. OSA Spring Topical Meetings'97. Proc. Ultrafast Electronics and Optoelectronics, Incline Village, Nevada, 1997, Paper UTUA1-1, pp. 118-120
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6. HAUENSCHILD, J., FELDER, A., KERBER, M., REIN, H.-M., and SCHMIDT, L.: 'A 22Gb/s decision circuit and a 32Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology'. Proc. IEEE 1992 Bipolar Circuits and Technology Meeting, Minneapolis, 1992, pp. 151-154
7. REIN, H.-M., and MÖLLER, M.: 'Design considerations for very-high-speed Si-bipolar IC's operating up to 50Gb/s', IEEE J. Solid-State Circuits, 1996, 8, pp. 1076-1090