NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 795-799

  Arai, Tomoyuki ^a   Sawada, Ken ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; FABRICATION; NICKEL COMPOUNDS; OHMIC CONTACTS; THERMODYNAMIC STABILITY;

DRAIN CONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037279894     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1563251     Document Type: Article

References (21)

1. 1 T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, IEEE J. Solid-State Circuits 33, 1321 (1998).
2. S. Kimura, Y. Imai, Y. Umeda, and T. Enoki, IEEE Trans. Microwave Theory Tech. 44, 1688 (1996).
3. M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, IEEE Trans. Microwave Theory Tech. 45, 2274 (1997).
4. K. Murata, T. Otsuji, and Y. Yamane, IEE Electron. Lett. 35, 1379 (1999).
5. H. Shigematsu, M. Sato, T. Suzuki, T. Takahashi, K. Imanishi, N. Hara, H. Ohnishi, and Y. Watanabe, IEEE GaAs Integrated Circuit Symposium, 2000.
6. K. Murata, T. Otsuji, E. Sano, S. Kimura, and Y. Yamane, IEICE Trans. Electron. E83-C, 1166 (2000).
7. K. Sano, K. Murata, and Y. Yamane, IEICE Trans. Electron. E83-C, 1788 (2000).
8. T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, K. Imanishi, T. Hirose, and Y. Watanabe, IEEE ISSCC Tech. Dig. 192 (2002).
9. Y. Nakasha, T. Suzuki, H. Kano, A. Ohya, K. Sawada, K. Makiyama, T. Takahashi, M. Nishi, T. Hirose, M. Takikawa, and Y. Watanabe, IEEE ISSCC Tech. Dig. 190 (2002).
10. H. Kano, T. Suzuki, S. Yamaura, Y. Nakasha, K. Sawada, T. Takahashi, K. Makiyama, T. Hirose, and Y. Watanabe, IEEE MTT-S Int. Microwave Symp. Dig. 1, 75 (2002).
11. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, IEEE Electron Device Lett. 16, 515 (1995).
12. T. Suemitsu, T. Enoki, N. Sano, M. Tomizawa, and Y. Ishii, IEEE Trans. Electron Devices 45, 2390 (1998).
13. M. H. Somerville, A. Ernst, and J. A. del Alamo, IEEE Trans. Electron Devices 47, 922 (2000).
14. K. Sawada, T. Arai, T. Takahashi, and N. Hara, Ext. Abst. SSDM, 66 (2001).
15. T. Arai, K. Sawada, N. Okamoto, K. Makiyama, T. Takahashi, and N. Hara, Device Res. Conf. Conf. Dig. 167 (2002).
16. N. Okamoto, T. Takahashi, K. Imanishi, K. Sawada, and N. Hara, Tech. Dig. - Int. Electron Devices Meet. 189 (2001).
17. T. Kosugi, Y. Umeda, T. Suemitsu, T. Enoki, and Y. Yamane, Jpn. J. Appl. Phys., Part 1 40, 2725 (2001).
18. S. Nakajima, M. Yanagisawa, E. Tsumura, and T. Sakurada, IEEE Trans. Electron Devices 47, 2255 (2000).
19. P. M. Capani, S. D. Mukherjee, P. Zwicknagal, J. D. Berry, H. T. Griem, L. Rathbun, and L. F. Eastman, Electron. Lett. 20, 446 (1984).
20. M. Murakami, K. D. Childs, J. M. Baker, and A. Callegari, J. Vac. Sci. Technol. B 4, 905 (1986).
21. H. Kawata, T. Oku, A. Otsuki, and M. Murakami, J. Appl. Phys. 75, 2530 (1994).