The effects of development parameter on line edge roughness in sub-0.20 μm line patterns

ICVC 1999 - 6th International Conference on VLSI and CAD

Volumn , Issue , 1999, Pages 490-493

  Ha, Taejoong ^a   Lee, Sang Bok ^a   Yang, Hyun Jo ^a   Park, Jinwon ^a  

^a Research and Development Division   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84890405910     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICVC.1999.820980     Document Type: Conference Paper

References (5)

1. Eishi Shiobara et al., "Resist Edge Roughness with Reducing Pattern Size", Proc. SPIE, vol. 3333, 313(1998)
2. Tom Yamaguchi et al., "New development model: Aggregate Extraction model", Proc. SPIE, vol. 3333, 830(1998)
3. K. Kamon et al., "Resist Cluster Formation Model and Development Simulation", Proc. SPIE, 3333, 830(1998)
4. Kenichi. Kanzaki et al., "Nonhomogeneous Pattern formation in the Dissolution Processes of Novolak-diazonaphthoquinone Resists", JJAP, vol. 37, 6266(1998)
5. D. He and F. Cenina, "Process Dependence of roughness in a positive-tone chemically amphfied resist", J. Vac. Sci. Technol., B 16(6), 3748(1998)