Thickness of the SiO2/Si interface and composition of silicon oxide thin films: Effect of wafer cleaning procedures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 493-498

  Stedile, F C ^a   Baumvol, I J R ^a   Oppenheim, I F ^b   Trimaille, I ^c   Ganem, J J ^c   Rigo, S ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); NUCLEAR PHYSICS; SCATTERING; SEMICONDUCTING SILICON; SILICA; SILICON WAFERS; STOICHIOMETRY; THERMAL EFFECTS; ULTRATHIN FILMS;

AREAL DENSITY; CHANNELING; GRAZING ANGLE DETECTION; NUCLEAR REACTION; OXIDE FILMS; RAPID THERMAL CLEANING;

SURFACE CLEANING;

EID: 0030565165     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01184-6     Document Type: Article

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