High performance, high yield InP DHBT production process for 40 Gbps applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 493-496

  Sawdai, D ^a   Kaneshiro, E ^a   Gutierrez Aitken, A ^a   Grossman, P C ^a   Sato, K ^a   Kim, W ^a   Leslie, G ^a   Eldredge, J ^a   Block, T ^a   Chin, P ^a   Tran, L ^a   Oki, A K ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BANDWIDTH; ELECTRIC BREAKDOWN; FREQUENCY SYNTHESIZERS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DIFITAL COMMUNICATION BANDWIDTHS; DIGITAL LOGICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034841377     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Future technologies for commercial and defense telecommunication electronics
2. A 25 GHz InGaAs/InAlAs - InP HBT Power MMIC with 48% Power added efficiency
3. 67-GHz static frequency divider using 0.2-μm Self-Aligned SiGe HBTs
4. max over 250 GHz
5. Lateral design of InP/InGaAs DHBTs for 40 GBIT/s ICs
6. InP HEMT Lightwave communication Ics for 40 Gbit/s and beyond
7. InP-Collector double-heterojunction bipolar transistors by valved phosphorous cracker
8. Performance and reliability of an advanced production GaAs HBT process technology