Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT

IEEE Electron Device Letters

Volumn 22, Issue 7, 2001, Pages 309-311

  Sokolich, Marko ^a,b   Kramer, Allan R ^b   Boegeman, Young Kim ^b   Martinez, Rosanna R ^b  

^a IEEE   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER DISSIPATION; RING OSCILLATOR GATE DELAY;

CAPACITANCE; ELECTRIC INVERTERS; FLIP FLOP CIRCUITS; FREQUENCY DIVIDING CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEQUENTIAL CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035395944     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.930674     Document Type: Article

References (15)

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2. A 1:4 demultiplexer for 40 Gb/s fiber-optic applications
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4. A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain
5. A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
6. 82 GHz dynamic frequency divider in 5.5ps ECL SiGe HBT's
7. Analysis of interconnections with BCB for high-speed digital applications
8. 49.2 GHz HEMT static frequency divider using an analog/microwave design approach
9. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
10. An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs
11. Dry etching of polyimide vias using an inductively coupled plasma source: Model and experiment