40Gbit/s EAM driver IC in SiGe bipolar technology

Electronics Letters

Volumn 34, Issue 11, 1998, Pages 1095-1097

  Schmid, R ^a   Meister, T F ^b   Rest, M ^b   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE NETWORKS; BIPOLAR INTEGRATED CIRCUITS; ELECTROOPTICAL DEVICES; FIBER OPTIC NETWORKS; SEMICONDUCTING SILICON COMPOUNDS; TIME DIVISION MULTIPLEXING;

ELECTROABSORPTION MODULATORS (EAM);

LIGHT MODULATORS;

EID: 0032070922     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980786     Document Type: Article

References (7)

1. GOTTWALD, E.: Towards a 40Gbit/s electrical time division multiplexed optical transmission system'. Proc. ICCT, Beijing, China, May 1996, pp. 60-63
2. REIN, H.-M., et al.: 'A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10Gb/s optical-fiber links', IEEE J. Solid-State Circuits, 1994, 29, pp. 1014-1021
3. MEGHELLI, M., et al.: '30 Gbit/s InP DHBT 2:1 selector-driver IC for external laser modulation', Electron. Lett., 1997, 33, pp. 1057-1058
4. LAO, Z., et al.: 'High power modulator driver ICS up to 30Gb/s with AlGaAs/GaAs HEMTs'. GaAs IC Symp. Tech. Dig., 1997, pp. 223-226
5. SCHMID, R., et al.: '23Gbit/s SiGe modulator driver with 3.5V single-ended output swing', submitted to Electron. Lett.
6. REIN, H.-M., and MÖLLER, M.: 'Design considerations for very-high-speed Si-bipolar IC's operating up to 50Gb/s', IEEE J. Solid-State Circuits, 1996, 31, pp. 1976-1990
7. max and 11 ps gate delay'. Tech. Dig. IEDM '95, Washington, December 1995, pp. 739-742