Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 299-302

  Hafizi, M ^a   Delaney, M J ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; BIPOLAR TRANSISTORS; ELECTRIC RESISTANCE; FAILURE ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTOELECTRONIC DEVICES; RELIABILITY; SEMICONDUCTING INDIUM PHOSPHIDE; SPACE APPLICATIONS; STATISTICS; SUPERLATTICES;

ACTIVATION ENERGY; DEVICE LIFETIME; HETEROJUNCTION BIPOLAR TRANSISTORS; LOGNORMAL FAILURE DISTRIBUTION; SPACE PAYLOAD APPLICATIONS; TRIPLE MESA PROCESS;

TRANSISTORS;

EID: 0028346485     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)