Thermal impact of InGaAs on InP based HBTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 261-264

  Ray, M ^a   Hill, D ^a   Hartin, O ^a   Johnson, K ^a   Li, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL CONDUCTIVITY;

THERMAL CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035175289     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications