Anomalous collector-base leakage in selectively grown sige-base heterojunction bipolar transistors

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 720-723

  Terpstra, D ^a   De Boer, W B ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; SILICON ALLOYS;

BASE COMPOSITION; BORON DIFFUSIONS; DOPED POLYSILICON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84907888772     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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3. G. Niu et aI., "QuantitYing Neutral Base Recombination and the Effects of Collector-Base Junction Traps in UHV/CVD SiGe HBT's", IEEE Trans. Electr. Dev. 45 (1998) 2499.
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7. M. Willander et al., "Current transport in strained n-Si!.xGexfp-Si heterojunction diodes", J. Appl. Phys. 63 (1988) 5036.