Effects of Device Design on InP-Based HBT Thermal Resistance

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 4, 2001, Pages 185-189

  Thomas, Stephen ^a   Foschaar, James A ^a   Fields, Charles H ^a   Madhav, Meena M ^a   Sokolich, Marko ^a   Rajavel, Rajesh D ^a   Shi, Binqiang ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038062475     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.995832     Document Type: Article

References (11)

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2. M. Sokolich, C. Fields, B. Shi, Y. K. Brown, M. Montes, R. Martinez, A. R. Kramer, S. Thomas III, and M. Madhav, "A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT 1C technology," IEEE J. Solid-State Circuits, vol. 36, pp. 1328-1334, Sept. 2001.
3. K. Kiziloglu, S. Thomas III, B. M. Paine, F. Williams Jr, and C. H. Fields, "Investigation of process related reliability for InP-based heterojunction bipolar transistors (HBTs)," Electrochem. Soc. Proc., vol. 99-1, pp. 95-102, 1999.
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6. B. Yeats, "Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods," in Proc. GaAs 1C Symp.. 1999, pp. 59-62.
7. S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, /As, GaAs, GaR InGaAs, andlnGoAsP. New York: Wiley, 1992.
8. H.-F. Chau, W. Liu, and E. A. Beam III, "InP-Based heterojunction bipolar transistors: Recent advances and thermal properties," Microw. Opt. Technol. Lett., vol. 11, pp. 114-120, Feb. 1996.
9. W. Liu, H.-F. Chau, and E. Beam III, "Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 388-395, Mar. 1996.
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11. M. Hafizi, W. E. Stanchina, R. A. Metzger, P. A. Macdonald, and F Williams Jr, "Temperature dependence of DC and RF characteristics of AlInAs/GalnAs HBTs," IEEE Trans. Electron Devices, vol. 40, pp. 1583-1588, Sept. 1993.