Thermally stimulated current in SiO2

Microelectronics Reliability

Volumn 39, Issue 9, 1999, Pages 1323-1336

  Fleetwood, D M ^a   Reber Jr, R A ^a   Riewe, L C ^a   Winokur, P S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRON TRAPS; INTERFACES (MATERIALS); SILICA; THERMAL EFFECTS;

THERMALLY STIMULATED CURRENTS (TSC); TRAPPED-HOLE ENERGY;

MOS CAPACITORS;

EID: 0033313560     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00084-0     Document Type: Article

References (101)

1. Simmons J.G., Taylor G.W. High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels. Phys. Rev. B. 5:1972;1619-1639.
2. Simmons J.G., Taylor G.W., Tam M.C. Thermally stimulated currents in semiconductors and insulators having arbitrary trap distributions. Phys. Rev. B. 7:1973;3714-3719.
3. Esqueda P.D., Das M.B. Characterization of surface states in HCl grown oxides using MOS transient currents. Solid-State Electron. 23:1980;365-375.
4. Lushnikov N.A., Zhdan A.G. Determination of the parameters of surface states by the method of thermally stimulated discharge of a metal-insulator-semiconductor capacitor. Sov. Phys. Semicond. 16:1982;509-512. [Fiz. Tekh. Poluprovdn. 1982;16:793-97].
5. Shanfield Z. Thermally stimulated current measurements on irradiated MOS capacitors. IEEE Trans. Nucl. Sci. 30:1983;4064-4070.
6. Shanfield Z., Moriwaki M.M. Characteristics of hole traps in dry and pyrogenic gate oxides. IEEE Trans. Nucl. Sci. 31:1984;1242-1248.
7. Shanfield Z., Moriwaki M.M. Radiation-induced hole trapping and interface state characteristics of Al-gate and poly-Si gate MOS capacitors. IEEE Trans. Nucl. Sci. 31:1985;3929-3934.
8. Antonenko V.I., Zhdan A.G., Minchenko A.I., Sul'zhenko P.S. Determination of the parameters of surface states by the method of a thermally stimulated discharge of a metal-insulator-semiconductor capacitor under constant capacitance conditions. Sov. Phys. Semicond. 20:1986;131-134. [Fiz. Tekh. Poluprovodn. 1986;20:208-13].
9. Cartier E., Pfluger P. Detection of hot electron-induced radiation damage in organic dielectrics by exoelectron emission from thin films. IEEE Trans. Electr. Insul. 22:1987;123-128.
10. Kato K., Iwamoto M., Hino T. Determination of the polarity of carrier traps in gamma-irradiated polyethylene by thermally stimulated current measurements using a temperature gradient. IEEE Trans. Electr. Insul. 22:1987;425-429.
11. Landweer G., Schreutelkamp R., Simons H., Bezemer J., van der Weg W.F. Determination of the density of states in amorphous silicon from thermostimulated conductivity measurements. J. Non-Cryst. Sol. 97-98:1987;711-714.
12. Shanfield Z., Moriwaki M.M. Critical evaluation of the midgap-voltage-shift method for determining oxide trapped charge in irradiated MOS devices. IEEE Trans. Nucl. Sci. 34:1987;1159-1165.
13. Antonenko V.I., Zhdan A.G., Sul'zhenko P.S. Identification of spatial localization of surface states in experiments involving thermally stimulated discharge of a metal-insulator-semiconductor capacitor. Sov. Phys. Semicond. 22:1988;473-475. [Fiz. Tekh. Poluprovodn. 1988;20:758-760].
14. Goldman E.I., Zhdan A.G. Problems of relaxation spectroscopy of localized electron states. Semicond. Sci. Technol. 5:1990;675-685.
15. Shanfield Z., Brown G.A., Revesz A.G., Hughes H.L. A new MOS radiation-induced charge: negative fixed interface charge. IEEE Trans. Nucl. Sci. 39:(2):1992;303-307. [J. Rad. Effects: Res. Eng. 1990;8(2):1-9].
16. Singh J.P., Bedi R.K. Thermally stimulated currents in epitaxially grown tin selenide films. Japan J. Appl. Phys. 29:1990;L869-L871.
17. Fleetwood D.M., Reber R.A. Jr, Winokur P.S. Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices. IEEE Trans. Nucl. Sci. 38:1991;1066-1077.
18. Zhu M. A study of the density of gap states in amorphous semiconductors from thermostimulated conductivity spectra. Appl. Phys. A. 52:1991;285-288.
19. Fleetwood D.M., Reber R.A. Jr, Winokur P.S. Trapped-hole annealing and electron trapping in MOS devices. Appl. Phys. Lett. 60:1992;2008-2010.
20. Fleetwood D.M., Miller S.L., Reber R.A. Jr, McWhorter P.J., Winokur P.S., Shaneyfelt M.R., Schwank J.R. New insights into radiation-induced oxide-trap charge through thermally stimulated-current measurement and analysis. IEEE Trans. Nucl. Sci. 39:1992;2192-2203.
21. Miller S.L., Fleetwood D.M., McWhorter P.J. Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique. Phys. Rev. Lett. 69:1992;820-823.
22. 2 defect density and energy in irradiated MOS capacitors. Rev. Sci. Instrum. 63:1992;5714-5725.
23. Baldini A., Bruzzi M. Thermally stimulated current spectroscopy: experimental techniques for the investigation of silicon detectors. Rev. Sci. Instrum. 64:1993;932-936.
24. Fleetwood D.M., Winokur P.S., Reber R.A. Jr, Meisenheimer T.L., Schwank J.R., Shaneyfelt M.R., Riewe L.C. Effects of oxide traps, interface traps, and border traps on MOS devices. J. Appl. Phys. 73:1993;5058-5074.
25. Fleetwood D.M., Shaneyfelt M.R., Riewe L.C., Winokur P.S., Reber R.A. Jr. The role of border traps in MOS high-temperature postirradiation annealing response. IEEE Trans. Nucl. Sci. 40:(6):1993;1323-1334.
26. Miller S.L., Fleetwood D.M., McWhorter P.J., Reber R.A. Jr, Murray J.R. A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements. J. Appl. Phys. 74:1993;5068-5077.
27. Fleetwood D.M., Kosier S.L., Nowlin R.N., Schrimpf R.D., Reber R.A. Jr, DeLaus M., Winokur P.S., Wei A., Combs W.E., Pease R.L. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Trans. Nucl. Sci. 41:1994;1871-1883.
28. 2O. IEEE Trans. Nucl. Sci. 41:1994;1854-1863.
29. Shaneyfelt M.R., Fleetwood D.M., Schwank J.R., Meisenheimer T.L., Winokur P.S. Effects of burn-in on radiation hardness. IEEE Trans. Nucl. Sci. 41:1994;2550-2559.
30. Warren W.L., Shaneyfelt M.R., Fleetwood D.M., Schwank J.R., Winokur P.S., Devine R.A.B. Microscopic nature of border traps in MOS oxides. IEEE Trans. Nucl. Sci. 41:1994;1817-1827.
31. 2 films. J. Appl. Phys. 78:1995;3156-3159.
32. Paillet P., Autran J.L., Leray J.L., Aspar B., Auberton-Herve A.J. Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides. IEEE Trans. Nucl. Sci. 42:1995;2108-2113.
33. Warren W.L., Shaneyfelt M.R., Fleetwood D.M., Winokur P.S., Montague S. Electron and hole trapping in doped oxides. IEEE Trans. Nucl. Sci. 42:1995;1731-1739.
34. Fang Z.Q., Look D.C., Yamamoto H., Shimakura H. Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs. Appl. Phys. Lett. 69:1996;3417-3419.
35. 2O-nitrided oxides. J. Appl. Phys. 79:1996;1583-1594.
36. Fleetwood D.M., Riewe L.C., Schwank J.R., Witczak S.C., Schrimpf R.D. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides. IEEE Trans. Nucl. Sci. 43:1996;2537-2546.
37. Look D.C., Fang Z.Q., Kim W., Aktas O., Botchkarev A., Salvador A., Morkoc H. Thermally stimulated current trap in GaN. Appl. Phys. Lett. 68:1996;3775-3777.
38. Arkhipov V.I., Adriaenssens G.J. Thermally stimulated currents controlled by fluctuating localized states. J. Non-Cryst. Sol. 220:1997;309-315.
39. Devautor S., Vanderschueren J., Giuntini J.C., Henn F., Zanchetta J.V. Analysis of thermally stimulated currents measured on ionic conductors. J. Appl. Phys. 82:1997;5057-5062.
40. Fleetwood D.M. Revised model of thermally stimulated current in MOS capacitors. IEEE Trans. Nucl. Sci. 44:1997;1826-1835.
41. Gonon P., Prawer S., Jamieson D. Thermally stimulated currents in polycrystalline diamond films: application to radiation dosimetry. Appl. Phys. Lett. 70:1997;2996-2998.
42. 5 films by zero-bias thermally stimulated current spectroscopy. Appl. Phys. Lett. 71:1997;500-502.
43. Lu D.R., Li B.Q. Observation of dc currents induced in MOS capacitors during NBTS aging. Microelectron. Reliab. 37:1997;171-177.
44. Warren W.L., Pike G.E., Tuttle B.A., Dimos D. Polarization induced trapped charge in ferroelectrics. Appl. Phys. Lett. 70:1997;2010-2012.
45. Cai J., Sah C.T. Theory of thermally stimulated charges in MOS gate oxide. J. Appl. Phys. 83:1998;851-857.
46. Dmitriev S.G., Markin Yu.V. Macroscopic ion traps at the silicon-oxide interface. Semiconductors. 32:1998;1284-1288. [Fiz. Tekh. Poluprovodn. 1998:32:1439-444].
47. Fleetwood D.M., Winokur P.S., Riewe L.C., Reber R.A. Jr. Bulk oxide and border traps in MOS capacitors. J. Appl. Phys. 84:1998;6141-6148.
48. Fleetwood D.M., Winokur P.S., Shaneyfelt M.R., Riewe L.C., Flament O., Paillet P., Leray J.L. Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge. IEEE Trans. Nucl. Sci. 45:1998;2366-2374.
49. Iwamoto I., Wu C.X., Mizutani Y. Analysis of thermally stimulated Maxwell-displacement current across organic monolayers. J. Appl. Phys. 83:1998;4891-4896.
50. Meier M., Karg S., Zuleeg K., Brtting W., Schwoerer M. Determination of trapping parameters in poly(p-phenylenevinylene) light-emitting devices using thermally stimulated currents. J. Appl. Phys. 84:1998;87-92.
51. 2. IEEE Trans. Nucl. Sci. 45:1998;1379-1384.
52. Rubinger R.M., Bezerra J.C., Chagas E.F., Gonzalez J.C., Rodrigues W.N., Ribeiro G.M., Moreira M.V.B., de Oliveira A.G. Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples. J. Appl. Phys. 84:1998;3764-3769.
53. 2. Ma T.P., Dressendorfer P.V. Ionizing radiation effects in MOS devices and circuits. 1989;87-192 Wiley, New York.
54. DiMaria D.J., Cartier E. Mechanism for stress-induced leakage currents in thin silicon dioxide films. J. Appl. Phys. 78:1995;3883-3894.
55. Houssa M., Nigam T., Mertens P.W., Heyns M.M. Soft breakdown in ultrathin gate oxides: correlation with the percolation theory of nonlinear conductors. Appl. Phys. Lett. 73:1998;514-516.
56. 2 layer. J. Appl. Phys. 75:1994;3530-3535.
57. 2. Appl. Phys. Lett. 15:1969;174-177.
58. 2 1985;58:2252-61.
59. Buchanan D.A., DiMaria D.J. Interface and bulk trap generation in MOS capacitors. J. Appl. Phys. 67:1990;7439-7452.
60. Lenahan P.M., Dressendorfer P.V. Paramagnetic trivalent silicon centers in gamma irradiated MOS structures. Appl. Phys. Lett. 44:1984;96-98.
61. Schwank J.R., Fleetwood D.M. The effect of postoxidation anneal temperature on radiation-induced charge trapping in polycrystalline Si gate MOS devices. Appl. Phys. Lett. 53:1988;770-772.
62. Fleetwood D.M., Warren W.L., Shaneyfelt M.R., Devine R.A.B., Scofield J.H. Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency. J. Non-Cryst. Sol. 187:1995;199-205.
63. Warren W.L., Shaneyfelt M.R., Schwank J.R., Fleetwood D.M., Winokur P.S., Devine R.A.B., Maszara W.P., McKitterick J.B. Paramagnetic defect centers in irradiated BESOI and SIMOX buried oxides. IEEE Trans. Nucl. Sci. 40:1993;1755.
64. 2 on Si: an additional complexity in oxide charge trapping. J. Appl. Phys. 76:1994;2872-2880.
65. 2: evidence for a localized EP structure. IEEE Trans. Nucl. Sci. 42:1995;1740-1743.
66. 2: a first principles quantum mechanical investigation. IEEE Trans. Nucl. Sci. 44:1799;1799-1803.
67. Shu K., Liao C., Hwu J.G. Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices. Appl. Phys. Lett. 61:1992;675-677.
68. Lenahan P.M., Dressendorfer P.V. Hole traps and trivalent Si centers in MOS devices. J. Appl. Phys. 55:1984;3495-3499.
69. 2. J. Electrochem. Soc. 139:1992;872-880.
70. Scoggan G.A., Ma T.P. Effects of electron-beam irradiation on MOS structures as influenced by the Si dopant. J. Appl. Phys. 48:1977;294-300.
71. Winokur P.S., Schwank J.R., McWhorter P.J., Dressendorfer P.V., Turpin D.C. Correlating the radiation response of MOS capacitors and transistors. IEEE Trans. Nucl. Sci. 31:1984;1453-1460.
72. McWhorter P.J., Winokur P.S., Pastorek R.A. Donor/acceptor nature of radiation-induced interface traps. IEEE Trans. Nucl. Sci. 35:1988;1154-1159.
73. Fleetwood D.M. Long-term annealing study of midgap interface-trap charge neutrality. Appl. Phys. Lett. 60:1992;2883-2885.
74. Fleetwood D.M., Shaneyfelt M.R., Warren W.L., Schwank J.R., Meisenheimer T.L., Winokur P.S. Border traps: issues for MOS radiation response and long-term reliability. Microelectron. Reliab. 35:1995;403-428.
75. Bhat N., Saraswat K.C. Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry. J. Appl. Phys. 84:1998;2722-2726.
76. Fleetwood DM, Winokur PS, Riewe LC, Flament O, Paillet P, Leray JL. The role of electron transport and trapping in MOS total-dose modeling. IEEE Trans Nucl Sci 1999;46(6).
77. Shaneyfelt M.R., Schwank J.R., Fleetwood D.M., Winokur P.S., Hughes K.L., Sexton F.W. Field dependence of interface-trap buildup in poly-Si and metal gate MOS devices. IEEE Trans. Nucl. Sci. 37:1990;1632-1640.
78. Shaneyfelt M.R., Fleetwood D.M., Schwank J.R., Hughes K.L. Charge yield for Co-60 and 10-keV X-ray irradiations of MOS devices. IEEE Trans. Nucl. Sci. 38:1991;1187-1194.
79. Fleetwood D.M., Warren W.L., Schwank J.R., Winokur P.S., Shaneyfelt M.R., Riewe L.C. Effects of interface traps and border traps on MOS postirradiation annealing response. IEEE Trans. Nucl. Sci. 42:1995;1698-1707.
80. Fleetwood D.M. Fast and slow border traps in MOS devices. IEEE Trans. Nucl. Sci. 43:1996;779-786.
81. 2. Appl. Phys. Lett. 74:1999;2969-2971.
82. Miller S.L., McWhorter P.J., Miller W.M., Dressendorfer P.V. A practical predictive formalism to describe generalized activated physical processes. J. Appl. Phys. 70:1991;4555-4568.
83. Habing D.H., Shafer B.D. Room temperature annealing of ionization-induced damage in CMOS circuits. IEEE Trans. Nucl. Sci. 20:1973;307-312.
84. Srour J.R., Othmer S., Chen S.C. Leakage current phenomena in irradiated SOS devices. IEEE Trans. Nucl. Sci. 24:1977;2119-2127.
85. Stanley T., Neamen D., Dressendorfer P.V., Schwank J.R., Winokur P.S., Ackermann M., Jungling K., Hawkins C., Granneman W. The effect of operating frequency in the radiation induced buildup of trapped holes and interface states in MOS devices. IEEE Trans. Nucl. Sci. 32:1985;3982-3987.
86. Freitag R.K., Dozier C.M., Brown D.B. Growth and annealing of trapped holes and interface states using time-dependent biases. IEEE Trans. Nucl. Sci. 34:1987;1172-1177.
87. Akhmetov V.D., Bolotov V.V., Vishnyakov A.V. Quantitative model for charge buildup in MOS transistors under ionizing radiation. Sov. Phys. Tech. Phys. 34:1989;746-750. [1989:59:55-9].
88. Fleetwood D.M. Radiation-induced charge neutralization and interface-trap buildup in MOS devices. J. Appl. Phys. 67:1990;580-582.
89. Fleetwood D.M., Winokur P.S., Riewe L.C. Predicting switched-bias response from steady-state irradiations. IEEE Trans. Nucl. Sci. 37:1990;1806-1817.
90. Pershenkov V.S., Belyakov V.V., Shalnov A.V. Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures. IEEE Trans. Nucl. Sci. 41:1994;2593-2599.
91. 2 deposited at 300°C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces. J. Appl. Phys. 63:1988;4744-4746.
92. 2 on n-type Gan. Appl. Phys. Lett. 68:1996;1850-1852.
93. Meinertzhagen A., Petit C., Jourdain M., Mondon F., Gogenheim D. On positive charge annihilation and stress-induced leakage current decrease. Microelectron. Reliab. 39:1999;191-196.
94. Scarpa A., De Salvo B., Ghibaudo G., Pananakakis G., Paccagnella A., Ghidini G. On the correlation between SILC and hole fluence through the oxide. Microelectron. Reliab. 39:1999;197-202.
95. Riess P., Ghibaudo G., Pananakakis G., Brini J. Measurement and modeling of the annealing kinetics of stress induced leakage current in ultrathin oxides. Microelectron. Reliab. 39:1999;203-208.
96. Bruyere S., Vincent E., Ghibaudo G. SILC in very thin dielectric layers: some limitations to reliability extrapolation modeling. Microelectron. Reliab. 39:1999;209-214.
97. 2 layers. Microelectron. Reliab. 39:1999;161-164.
98. Chatterjee PK, Hunter WR, Amerasekera A, Aur S, Duvvury C, Nicollian PE, Ting LM, Yang P. Trends for deep submicron VLSI and their implications for reliability. Proc IRPS (IEEE Cat. No. 95CH3471-0 1995:1-11.
99. Lee K., Kim C., Ryu D.R., Sim J., Lee S., Moon B.S., Kim K.Y., Kim N.J., Yoo S.M., Yoon H., Yoo J.H., Cho S.I. Low-voltage, high-speed circuit designs for gigabit DRAMs. IEEE J. Solid-State Ckt. 32:1997;642-648.
100. 2 dielectrics. IEEE Trans. Electron Dev. 44:1997;104-109.
101. 5 thin films deposited on Si. Microelectron. Reliab. 39:1999;261-268.